FDC6331L ,Integrated Load SwitchGeneral Description • –2.8 A, –8 V. RDS(ON) = 55 mΩ @ V GS = –4.5 V This device is particularly su ..
FDC6331L_NL ,Integrated Load SwitchApplications low RDS(ON) • Load switch • Power management D2 Equivalent Circuit Q2S1Vin,R1 Vout ..
FDC6332L ,Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFETFeatures This Load Switch integrates an N-Channel Power • –1 A, 8 V. R = 350 mΩ @ V = –4.5 V DS( ..
FDC6333C ,30V N & P-Channel PowerTrench MOSFETsElectrical Characteristics T = 25°C unless otherwise notedAMinTypUnitsV = 0 V, I = 250 μADDrai ..
FDC6333C_NL ,30V N & P-Channel PowerTrench MOSFETsElectrical Characteristics T = 25°C unless otherwise notedAMinTypUnitsV = 0 V, I = 250 μADDrai ..
FDC633N ,N-Channel Enhancement Mode Field Effect TransistorFeaturesThis N-Channel enhancement mode power field effect5.2 A, 30 V. R = 0.042 Ω @ V = 4.5 V ..
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FDC6331L
Integrated Load Switch
FDC6331L August 2001 FDC6331L Integrated Load Switch Features General Description · –2.8 A, –8 V. RDS(ON) = 55 mW @ V GS = –4.5 V This device is particularly suited for compact power RDS(ON) = 70 mW @ V GS = –2.5 V management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are R = 100 mW @ V = –1.8 V DS(ON) GS needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P -Channel · Control MOSFET (Q1) includes Zener protection for TM power MOSFET (Q2) in one tiny SuperSOT -6 ESD ruggedness (>6KV Human body model) package. · High performance trench technology for extremely Applications low RDS(ON) · Load switch · Power management D2 Equivalent Circuit Q2 S1 Vin,R1 Vout,C1 4 3 D1 IN + – OUT V DROP ON/OFF Vout,C1 5 2 Q1 G2 S2 R1,C1 R2 TM 6 1 SuperSOT -6 ON/OFF G1 Pin 1 See Application Circuit SuperSOT™-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Maximum Input Voltage ± 8 V IN V High level ON/OFF voltage range –0.5 to 8 V ON/OFF I Load Current – Continuous (Note 1) –2.8 A Load – Pulsed –9 P Maximum Power Dissipation (Note 1) 0.7 W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1) 180 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 60 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .331 FDC6331L 7’’ 8mm 3000 units Ó2001 FDC6331L Rev C(W)
