FDC6327 ,Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFETElectrical Characteristics ASymbol Parameter Test Conditions TypeMin Typ Max UnitsOff Characte ..
FDC6327C ,Dual N & P-Channel 2.5V Specified PowerTrench TM MOSFETElectrical Characteristics ASymbol Parameter Test Conditions TypeMin Typ Max UnitsOff Characte ..
FDC6329L ,Integrated Load SwitchFeaturesThis is particularly suited for compact pVV @ V=5V, IA. R = 0.07 Ω VVINL)management in po ..
FDC6330 ,Integrated Load SwitchApplications• Power management• Load actuationVout,C1Vin,R1 4 3EQUIVALENT CIRCUITQ2ON/OFF5 2 Vout,C ..
FDC6330L ,Integrated Load SwitchGeneral Description• V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 ΩThis device is particularly suited for ..
FDC6331L ,Integrated Load SwitchGeneral Description • –2.8 A, –8 V. RDS(ON) = 55 mΩ @ V GS = –4.5 V This device is particularly su ..
FMU-12S , Fast-Recovery Rectifier Diodes
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FMU-32R , Fast-Recovery Rectifier Diodes
FMU-34S , Fast-Recovery Rectifier Diodes
FMU-36R , Fast-Recovery Rectifier Diodes
FMU-36S , Fast-Recovery Rectifier Diodes
FDC6327
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6327C July 2000 FDC6327C TM Dual N & P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These N & P-Channel 2.5V specified MOSFETs are • N-Channel 2.7A, 20V. R = 0.08Ω @ V = 4.5V DS(on) GS produced using Fairchild Semiconductor's advanced R = 0.12Ω @ V = 2.5V PowerTrench process that has been especially tailored DS(on) GS to minimize on-state resistance and yet maintain low gate • P-Channel -1.6A, -20V.R = 0.17Ω @ V = -4.5V DS(on) GS charge for superior switching performance. R = 0.25Ω @ V = -2.5V DS(on) GS These devices have been designed to offer exceptional power • Fast switching speed. dissipation in a very small footprint for applications where • Low gate charge. the bigger more expensive SO-8 and TSSOP-8 packages are impractical. • High performance trench technology for extremely low R . DS(ON) Applications TM • SuperSOT -6 package: small footprint (72% smaller • DC/DC converter than SO-8); low profile (1mm thick). • Load switch • Motor driving D2 S1 3 4 D1 2 5 G2 S2 TM 1 6 SuperSOT -6 G1 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter N-Channel P-Channel Units V Drain-Source Voltage 20 -20 V DSS V Gate-Source Voltage 8 8V GSS ± ± I Drain Current - Continuous (Note 1a) 2.7 -1.9 A D - Pulsed 8 -8 P Power Dissipation (Note 1a) 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 130 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 60 C/W JC ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .327 FDC6327C 7” 8mm 3000 1999 FDC6327C, Rev. E
