FDC6310P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile ..
FDC6312P ,Dual P-Channel 1.8V PowerTrench Specified MOSFETFeaturesThese P-Channel 1.8V specified MOSFETs are• –2.3 A, –20 V. R = 115 mΩ @ V = –4.5 VDS(ON) GS ..
FDC6318P ,Dual P-Channel 1.8V PowerTrench Specified MOSFETApplications low R DS(ON)• Power management TM• SuperSOT -6 package: small footprint (72% • Load sw ..
FDC6320 ,Dual N & P Channel / Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6320C ,Dual N & P Channel , Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6320C ,Dual N & P Channel , Digital FETapplications. Since bias resistors are notGate-Source Zener for ESD ruggedness.required, this dual ..
FMS6501 ,12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output DriversFMS6501 12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output D ..
FMS6501MSA28 ,12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output DriversFMS6501 12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output D ..
FMS6501MSA28X ,12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output DriversFeatures Description 12 x 9 Crosspoint Matrix The FMS6501 provides 12 inputs which can be routed to ..
FMS6502 ,8 Input, 6 Output Video Switch Matrix with Output DriversFeatures Description 8 x 6 Crosspoint Switch Matrix The FMS6502 provides eight inputs that can be r ..
FMS6502MTC24 , 8-Input, 6-Output Video Switch Matrix with Output Drivers, Input Clamp, and Bias Circuitry
FMS6502MTC24X , 8-Input, 6-Output Video Switch Matrix with Output Drivers, Input Clamp, and Bias Circuitry
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDC6310P April 2001 FDC6310P Ò Ò Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are · –2.2 A, –20 V. R = 125 mW @ V = –4.5 V DS(ON) GS produced using Fairchild Semiconductor's advanced RDS(ON) = 190 mW @ V GS = –2.5 V PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low · Low gate charge gate charge for superior switching performance. These devices have been designed to offer exceptional · Fast switching speed power dissipation in a very small footprint for applications where the bigger more expensive SO-8 · High performance trench technology for extremely and TSSOP-8 packages are impractical. low RDS(ON) Applications · SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick) · Load switch · Battery protection · Power management D2 S1 4 3 D1 5 2 G2 6 1 S2 TM SuperSOT -6 G1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) –2.2 A D – Pulsed –6 PD Power Dissipation for Single Operation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 130 R °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 60 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .310 FDC6310P 7’’ 8mm 3000 units Ó2001 FDC6310P Rev C(W)
