FDC6303 ,Digital FET/ Dual N-ChannelElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6303N ,Digital FET, Dual N-ChannelFeatures25 V, 0.68 A continuous, 2 A Peak.These dual N-Channel logic level enhancement mode fieldR ..
FDC6304P ,Digital FET, Dual P-Channelapplications operation in 3V circuits. V < 1.5 V.such as notebook computers and cellular phones. ..
FDC6304P ,Digital FET, Dual P-ChannelElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6305N ,Dual N-Channel 2.5V Specified PowerTrench TM MOSFETFeatures• 2.7 A, 20 V. R = 0.08 Ω @ V = 4.5 VThese N-Channel low threshold 2.5V specifiedDS(ON) GS ..
FDC6306P ,Dual P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -1.9 A, -20 V. R = 0.170 Ω ..
FMS6418AM16 ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV Signals FMS6418ATriple Video Driver with Selectable HD/SDVideo Filters for RGB or YUV Signals
FMS6418AM16 ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV Signalsapplications A 2-to-1 multiplexer is provided on each filter channel. The • DC coupled input, AC co ..
FMS6418AM16 ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV Signalsapplications A 2-to-1 multiplexer is provided on each filter channel. The • DC coupled input, AC co ..
FMS6418AM16 ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV SignalsApplicationsTSSOP packages.• Cable Set top boxes• Satellite Set top boxes• DVD players• HDTV• Perso ..
FMS6418AM16 ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV Signalsapplications A 2-to-1 multiplexer is provided on each filter channel. The • DC coupled input, AC co ..
FMS6418AM16X ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV SignalsFeatures Description• Three video anti-aliasing or reconstruction filters The FMS6418A offers compre ..
FDC6303
Digital FET/ Dual N-Channel
August 1997 FDC6303N Digital FET, Dual N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. These dual N-Channel logic level enhancement mode field R = 0.6 W @ V = 2.7 V effect transistors are produced using Fairchild's proprietary, DS(ON) GS high cell density, DMOS technology. This very high density R = 0.45 W @ V = 4.5 V. DS(ON) GS process is especially tailored to minimize on-state Very low level gate drive requirements allowing direct resistance. This device has been designed especially for operation in 3V circuits. V < 1.5 V. GS(th) low voltage applications as a replacement for digital transistors in load switching applications. Since bias Gate-Source Zener for ESD ruggedness. resistors are not required this one N-Channel FET can >6kV Human Body Model replace several digital transistors with different bias resistors like the IMHxA series. Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET. TM TM SuperSOT -8 SOIC-16 SuperSOT -6 SO-8 SOT-223 SOT-23 Mark: .303 4 3 5 2 6 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter FDC6303N Units V Drain-Source Voltage 25 V DSS V Gate-Source Voltage 8 V GSS I Drain Current - Continuous 0.68 A D - Pulsed 2 P Maximum Power Dissipation (Note 1a) 0.9 W D (Note 1b) 0.7 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 140 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W qJC © 1997 FDC6303N Rev.C
