FDC6301 ,Dual N-Channel / Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6301N ,Dual N-Channel , Digital FETElectrical Characteristics (T = 25°C unless otherwise noted)AZero Input Voltage Output CurrentI V = ..
FDC6301N_NL ,Dual N-Channel, Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6302P ,Digital FET, Dual P-ChannelElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6303 ,Digital FET/ Dual N-ChannelElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6303N ,Digital FET, Dual N-ChannelFeatures25 V, 0.68 A continuous, 2 A Peak.These dual N-Channel logic level enhancement mode fieldR ..
FMS6413CSX ,Single Channel 75 Ohm Cable Driver-FilterBlock Diagram SYNC STRIP,REFERENCE,AND TIMINGx2 VIDEO_OUTVIDEO_INgM1VREV. 1.0.2 6/27/02 FM ..
FMS6414CS ,Dual Channel Video Drivers with Integrated Filtersapplications with AC coupled input and stated load and input conditions. Capacitive bypassing VCC A ..
FMS6414CS ,Dual Channel Video Drivers with Integrated FiltersBlock DiagramSYNC STRIP,REF, AND TIMINGYIN YOUT1 8x2gM1V2 7NC (Reserved) VCC_VIDEOFMS64143 6GND_VID ..
FMS6414CS ,Dual Channel Video Drivers with Integrated FiltersApplications4th-order Butterworth characteristic with an optimization • CCTVtoward low overshoot an ..
FMS6414CS ,Dual Channel Video Drivers with Integrated FiltersFunctional DescriptionIntroduction sources 20µA to restore the DC level. The net result is that the ..
FMS6417CHX ,Selectable RGB (YUV) HD/SD video filter driver with Y, C, composite and modulator outputs.applications lator channel with notch and group delay compensation. The • 8MHz 6th order Y, C filter ..
FDC6301
Dual N-Channel / Digital FET
July 1997 FDC6301N Dual N-Channel , Digital FET General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. These dual N-Channel logic level enhancement mode field R = 5 W @ V = 2.7 V effect transistors are produced using Fairchild 's proprietary, DS(ON) GS high cell density, DMOS technology. This very high density R = 4 W @ V = 4.5 V. DS(ON) GS process is especially tailored to minimize on-state resistance. Very low level gate drive requirements allowing direct This device has been designed especially for low voltage operation in 3V circuits. V < 1.5V. applications as a replacement for digital transistors. Since bias GS(th) resistors are not required, these N-Channel FET's can replace Gate-Source Zener for ESD ruggedness. several digital transistors, with a variety of bias resistors. >6kV Human Body Model. TM TM SuperSOT -8 SOIC-16 SOT-23 SuperSOT -6 SO-8 SOT-223 Mark: .301 INVERTER APPLICATION Vcc 4 3 D OUT 5 2 IN G S 6 1 GND o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDC6301N Units V , V Drain-Source Voltage, Power Supply Voltage 25 V DSS CC V , V Gate-Source Voltage, V 8 V GSS IN IN I , I Drain/Output Current - Continuous 0.22 A D OUT - Pulsed 0.5 P Maximum Power Dissipation (Note 1a) 0.9 W D (Note 1b) 0.7 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 140 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W qJC © 1997 FDC6301N Rev.C
