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FDC608PZ from FAI,Fairchild Semiconductor

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FDC608PZ

Manufacturer: FAI

-20V P-Channel 2.5V PowerTrench?Specified MOSFET

Partnumber Manufacturer Quantity Availability
FDC608PZ FAI 33000 In Stock

Description and Introduction

-20V P-Channel 2.5V PowerTrench?Specified MOSFET The FDC608PZ is a P-Channel MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the key FAI (First Article Inspection) specifications for the FDC608PZ:  

1. **Manufacturer**: Fairchild Semiconductor (ON Semiconductor)  
2. **Part Number**: FDC608PZ  
3. **Type**: P-Channel MOSFET  
4. **Drain-Source Voltage (VDS)**: -30V  
5. **Gate-Source Voltage (VGS)**: ±20V  
6. **Continuous Drain Current (ID)**: -6.3A  
7. **Pulsed Drain Current (IDM)**: -25A  
8. **Power Dissipation (PD)**: 2.5W  
9. **RDS(ON) (Max)**: 50mΩ at VGS = -10V  
10. **Threshold Voltage (VGS(th))**: -1V to -3V  
11. **Package**: Power-SO8 (SOIC-8)  
12. **Operating Temperature Range**: -55°C to +150°C  

These specifications are based on the manufacturer's datasheet and are subject to verification during FAI.

Partnumber Manufacturer Quantity Availability
FDC608PZ FAIRCHILD 322 In Stock

Description and Introduction

-20V P-Channel 2.5V PowerTrench?Specified MOSFET The FDC608PZ is a P-channel MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:  

- **Drain-Source Voltage (VDS):** -30V  
- **Continuous Drain Current (ID):** -5.3A  
- **Pulsed Drain Current (IDM):** -20A  
- **Power Dissipation (PD):** 2.5W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 85mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Package:** TO-252 (DPAK)  
- **Applications:** Power management, load switching, DC-DC conversion  

For detailed datasheet information, refer to Fairchild's official documentation.

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