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FDC604PFAIRCHILN/a2786avaiP-Channel 1.8V Specified PowerTrench MOSFET


FDC604P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –5.5 A, –20 V. R = 33 mΩ @ V = –4.5 VDS(ON) GSF ..
FDC606P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –6 A, –12 V. R = 26 mΩ @ V = –4.5 V DS(ON) GS ..
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FDC608PZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETFeatures This P-Channel 2.5V specified MOSFET is produced • –5.8 A, –20 V. R = 30 mΩ @ V = –4.5 V ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFETapplications: „ High performance trench technology for extremely low rDS(on).load switching ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFET®FDC610PZ P-Channel PowerTrench MOSFETAugust 2007FDC610PZ ..
FMS6410BCS , Dual-Channel Video Drivers with Integrated Filters and Composite Video Summer
FMS6410BCSX , Dual-Channel Video Drivers with Integrated Filters and Composite Video Summer
FMS6410BCSX , Dual-Channel Video Drivers with Integrated Filters and Composite Video Summer
FMS6410CS ,Dual Channel Video Drivers with Integrated Filters and Composite Video Summerapplications with AC slew issues. A 0.1µF AC coupling capacitor is recommended coupled inputs and A ..
FMS6410CS ,Dual Channel Video Drivers with Integrated Filters and Composite Video SummerFunctional DescriptionThe chroma input is driven by a low impedance source of Introduction0.7V or t ..
FMS6410CSX ,Dual Channel Video Drivers with Integrated Filters and Composite Video SummerBlock DiagramSYNC STRIP, REF,AND TIMING1 YOUT 8YIN6dBgM1V2 7DNC VCC_VIDEO(Do Not Connect)FMS6410CVO ..


FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
FDC604P January 2001 FDC604P     P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –5.5 A, –20 V. R = 33 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s low voltage PowerTrench process. It has R = 43 mΩ @ V = –2.5 V DS(ON) GS been optimized for battery power management applications. R = 60 mΩ @ V = –1.8 V DS(ON) GS • Fast switching speed. Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) –5.5 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .604 FDC604P 7’’ 8mm 3000 units 2001 FDC604P Rev C (W)
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