FDC6020C ,Complementary PowerTrench MOSFETApplications • DC/DC converter • FLMP SSOT-6 package: Enhanced thermal • Load switch performance ..
FDC6020C ,Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDC602P ,P-Channel 2.5V PowerTrench Specified MOSFETFeatures This P-Channel 2.5V specified MOSFET uses a rugged • –5.5 A, –20 V R = 35 mΩ @ V = –4.5 V ..
FDC6036P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This dual P-Channel 1.8V specified MOSFET uses • –5 A, –20 V. R = 44 mΩ @ V = –4.5 V DS ..
FDC604P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –5.5 A, –20 V. R = 33 mΩ @ V = –4.5 VDS(ON) GSF ..
FDC606P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –6 A, –12 V. R = 26 mΩ @ V = –4.5 V DS(ON) GS ..
FMS6407MTC20X ,Triple Video Drivers with Selectable HD/Progressive/SD/Bypass FiltersFeatures Description• Three video anti-aliasing or reconstruction filters The FMS6407 offers compreh ..
FMS6407MTC20X ,Triple Video Drivers with Selectable HD/Progressive/SD/Bypass Filtersapplications. This part consists of a triple 6th • Supports D1, D2, D3 and D4 video D-connector ord ..
FMS6407MTC20X ,Triple Video Drivers with Selectable HD/Progressive/SD/Bypass Filters FMS6407Triple Video Drivers with SelectableHD/Progressive/SD/Bypass Filters
FMS6408MTC14-1 ,Triple Video Filter Driver for RGB and YUV SignalsFeatures Description• 7.6MHz 5th order RGB/YUV/YC CV filters The FMS6408 provides three video signal ..
FMS6408MTC141X ,Triple Video Filter Driver for RGB and YUV SignalsApplicationschannels have DC restore circuitry to clamp the DC input • Cable set top boxeslevels du ..
FMS6410 ,Dual Channel Video Drivers with Integrated Filters and Composite Video Summerapplications. This part consists of two 4 order • Composite Video SummerButterworth 7.1MHz low pas ..
FDC6020C
Complementary PowerTrench MOSFET
FDC6020C November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using • Q1 –4.2 A, –20V. R = 55 mΩ @ V = – 4.5 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 82 mΩ @ V = – 2.5 V DS(ON) GS process that has been especially tailored to minimize on-state resistance and yet maintain superior • Q2 5.9 A, 20V. R = 27 mΩ @ V = 4.5 V DS(ON) GS switching performance. R = 39 mΩ @ V = 2.5 V DS(ON) GS These devices are well suited for low voltage and • Low gate charge battery powered applications where low in-line power • High performance trench technology for extremely loss and fast switching are required. low R . DS(ON) Applications • DC/DC converter • FLMP SSOT-6 package: Enhanced thermal • Load switch performance in industry-standard package size • Motor Driving Bo Bot tt to om m Dr Dra aiin n Co Con nt ta ac ct t Q2 (N) Q2 (N) 4 4 3 3 2 2 5 5 1 1 6 6 Q1 (P Q1 (P) ) Bo Bot tt to om m Dr Dra aiin n Co Con nt ta ac ct t Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage –20 20 V DSS V Gate-Source Voltage ±12 ±12 V GSS I Drain Current - Continuous (Note 1a) –4.2 5.9 A D - Pulsed –20 20 P Power Dissipation for Dual Operation (Note 1a) 1.6 W D Power Dissipation for single Operation (Note 1a) 1.8 (Note 1b) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 68 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1a) 1 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .020 FDC6020C 7’’ 8mm 3000 units FDC6020C Rev B(W) 2003
