FDC5614P ,60V P-Channel Logic Level PowerTrench MOSFETFeatures This 60V P-Channel MOSFET uses Fairchild’s high • –3 A, –60 V. R = 0.105 Ω @ V = –10 V DS ..
FDC5614P_NL ,60V P-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely • DC-DC converters low R DS(ON)• L ..
FDC5661N , N-Channel Logic Level PowerTrench® MOSFET 60V, 4A, 60mΩ
FDC5661N_F085 ,60V N-Channel Logic Level PowerTrench?MOSFET.Features R = 47mΩ at V = 10V, I = 4.3A DC/DC converterDS(on) GS D R = 60mΩ at V = 4.5V, I = 4A ..
FDC6000NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDC6020C ,Complementary PowerTrench MOSFETApplications • DC/DC converter • FLMP SSOT-6 package: Enhanced thermal • Load switch performance ..
FMS6403MTC20X ,Triple Video Drivers w/Selectable HD/Progressive/SD/ Bypass Filters for RGB and YPbPr SignalsFMS6403 Triple Video Drivers w/Selectable HD/Progressive/SD/Bypass Filters for RGB and YPbPr Signa ..
FMS6406CS , Precision S-Video Filter with Summed Composite Output, Sound Trap, and Group Delay Compensation
FMS6407MTC20X ,Triple Video Drivers with Selectable HD/Progressive/SD/Bypass FiltersFeatures Description• Three video anti-aliasing or reconstruction filters The FMS6407 offers compreh ..
FMS6407MTC20X ,Triple Video Drivers with Selectable HD/Progressive/SD/Bypass Filtersapplications. This part consists of a triple 6th • Supports D1, D2, D3 and D4 video D-connector ord ..
FMS6407MTC20X ,Triple Video Drivers with Selectable HD/Progressive/SD/Bypass Filters FMS6407Triple Video Drivers with SelectableHD/Progressive/SD/Bypass Filters
FMS6408MTC14-1 ,Triple Video Filter Driver for RGB and YUV SignalsFeatures Description• 7.6MHz 5th order RGB/YUV/YC CV filters The FMS6408 provides three video signal ..
FDC5614P
60V P-Channel Logic Level PowerTrench MOSFET
FDC5614P February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –3 A, –60 V. R = 0.105 Ω @ V = –10 V DS(ON) GS voltage PowerTrench process. It has been optimized for R = 0.135 Ω @ V = –4.5 V DS(ON) GS power management applications. • Fast switching speed Applications • High performance trench technology for extremely • DC-DC converters low R DS(ON) • Load switch • Power management S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –60 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) –3 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA (Note 1) 30 R Thermal Resistance, Junction-to-Case °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .564 FDC5614P 7’’ 8mm 3000 units FDC5614P Rev C1 (W) 2002
