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FDC3612
100V N-Channel PowerTrench MOSFET
FDC3612 February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 2.6 A, 100 V R = 125 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 135 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • Low gate charge (14nC typ) • DC/DC converter • High power and current handling capability • Fast switching speed S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 2.6 A D – Pulsed 20 P D Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 30 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .362 FDC3612 7’’ 8mm 3000 units FDC3612 Rev B3 (W) 2002
