FDB8874 ,30V N-Channel PowerTrench MOSFETApplications High power and current handling capability• DC/DC convertersDGATEGDRAINSOURCES(FLANGE ..
FDB8880 ,30V N-Channel PowerTrench MOSFETFeatures General Description
FDB8874
30V N-Channel PowerTrench MOSFET
FDB8874 November 2004 FDB8874 ® N-Channel PowerTrench MOSFET 30V, 121A, 4.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to r = 4.7mΩ, V = 10V, I = 40A DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 6.0mΩ, V = 4.5V, I = 40A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge Applications High power and current handling capability • DC/DC converters D GATE G DRAIN SOURCE S (FLANGE) TO-263AB FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 121 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 107 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 21 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 105 mJ AS Power dissipation 110 W P D o o Derate above 25C0.73W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 1.36 C/W θJC o R Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB8874 FDB8874 TO-263AB 330mm 24mm 800 units FDB8874 FDB8874_NL (Note 4) TO-263AB 330mm 24mm 800 units ©2004 FDB8874 Rev. A2
