FDB8447L ,40V 40V N-Channel PowerTrench?MOSFETGeneral Description Max r = 8.5mΩ at V = 10V, I = 14AThis N-Channel MOSFET has been produced using ..
FDB8832 ,30V N-Channel Logic Level PowerTrench?MOSFETApplications Typ r = 1.5mΩ at V = 5V, I = 80A Starter / Alternator SystemsDS(on) GS D Typ Q = 1 ..
FDB8860 ,30V N-Channel Logic Level PowerTrench?MOSFETApplications R = 1.9mΩ (Typ), V = 5V, I = 80A DC-DC ConvertersDS(ON) GS D Q = 89nC (Typ), V = ..
FDB8860 ,30V N-Channel Logic Level PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Min Typ ..
FDB8870 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 3.9mΩ , V = 10V, I = 35ADS(ON) ..
FDB8874 ,30V N-Channel PowerTrench MOSFETApplications High power and current handling capability• DC/DC convertersDGATEGDRAINSOURCES(FLANGE ..
FMP-2FUR , Damper diode (Diode modulation for Displays)
FMP-2FUR , Damper diode (Diode modulation for Displays)
FMP-3FU , Damper diode (Diode modulation for Displays)
FMP-3FU , Damper diode (Diode modulation for Displays)
FMP-3FU , Damper diode (Diode modulation for Displays)
FMP-G12S , ULTRA-FAST-RECOVERY RECTIFIER DIODES
FDB8447L
40V 40V N-Channel PowerTrench?MOSFET
® FDB8447L 40V N-Channel PowerTrench MOSFET February 2007 FDB8447L ® 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description Max r = 8.5mΩ at V = 10V, I = 14A This N-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to Max r = 11mΩ at V = 4.5V, I = 11A DS(on) GS D deliver low r and optimized BV capability to offer DS(on) DSS Fast Switching superior performance benefit in the application. RoHS Compliant Application Inverter Power Supplies D D G G S TO-263AB S FDB Series MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 50 C -Continuous (Silicon limited) T = 25°C (Note 1) 66 C I A D -Continuous T = 25°C (Note 1a) 15 A -Pulsed 100 E Drain-Source Avalanche Energy (Note 3) 153 mJ AS Power Dissipation T = 25°C 60 C P W D Power Dissipation (Note 1a) 3.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 2.1 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB8447L FDB8447L TO-263AB 330mm 24mm 800 units 1 ©2007 FDB8447L Rev.C
