FDB6670AL_NL ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET has been• 80 A, 30 V R = 6.5 mΩ @ V = 10 VDS(ON) GSdesign ..
FDB6670AS ,30V N-Channel PowerTrench SyncFETFeatures This MOSFET is designed to replace a single MOSFET • 31 A, 30 V. R = 8.5 mΩ @ V = 10 V DS( ..
FDB6676 ,30V N-Channel Logic Level PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V. R = 6.0 mΩ @ V = 10 V DS(ON) GSspec ..
FDB6676S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 38 A, 30 V. R = 6.5 mΩ @ V = 10 V DS( ..
FDB6690S ,30V N-Channel PowerTrench SyncFETFeatures This MOSFET is designed to replace a single MOSFET • 21 A, 30 V. R = 15.5 mΩ @ V = 10 V DS ..
FDB7030BL ,N-Channel Logic Level PowerTrench ?MOSFETGeneral Description
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FMMZ5245 , SOT23 SILICON VOLTAGE REGULATOR DIODES
FMN-2206S , Silicon Diode
FDB6670AL_NL
N-Channel Logic Level PowerTrench MOSFET
FDP6670AL/FDB6670AL May 2003 FDP6670AL/FDB6670AL Ò N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been · 80 A, 30 V R = 6.5 mW @ V = 10 V DS(ON) GS designed specifically to improve the overall efficiency of R = 8.5 mW @ V = 4.5 V DS(ON) GS DC/DC converters using either synchronous or conventional switching PWM controllers. · Critical DC electrical parameters specified at These MOSFETs feature faster switching and lower elevated temperature gate charge than other MOSFETs with comparable R specifications. DS(ON) · High performance trench technology for extremely low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. · 175°C maximum junction temperature rating It has been optimized for low gate charge, low R DS(ON) and fast switching speed. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1) 80 A D – Pulsed (Note 1) 240 P D Total Power Dissipation @ T = 25°C 68 W C 0.45 Derate above 25°C W/°C T , T Operating and Storage Junction Temperature Range –65 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.2 qJC °C/W R qJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670AL FDB6670AL 13’’ 24mm 800 units FDP6670AL FDP6670AL Tube n/a 45 Ó2003 FDP6670AL/FDB6670AL Rev D(W)
