FDB6670AL ,N-Channel Logic Level PowerTrench TM MOSFETGeneral Description
FDB6670AL. ,N-Channel Logic Level PowerTrench TM MOSFETElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDB6670AL_NL ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET has been• 80 A, 30 V R = 6.5 mΩ @ V = 10 VDS(ON) GSdesign ..
FDB6670AS ,30V N-Channel PowerTrench SyncFETFeatures This MOSFET is designed to replace a single MOSFET • 31 A, 30 V. R = 8.5 mΩ @ V = 10 V DS( ..
FDB6676 ,30V N-Channel Logic Level PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V. R = 6.0 mΩ @ V = 10 V DS(ON) GSspec ..
FDB6676S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 38 A, 30 V. R = 6.5 mΩ @ V = 10 V DS( ..
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FDB6670AL-FDB6670AL.
N-Channel Logic Level PowerTrench TM MOSFET
July 1998 FDP6670AL/FDB6670AL TM N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 80 A, 30 V. R = 0.0065 W @ V =10 V, DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 0.0085 W @ V = 4.5 V. DS(ON) GS converters using either synchronous or conventional Critical DC electrical parameters specified at elevated switching PWM controllers. temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R Rugged internal source-drain diode can eliminate the need DS(on) specifications. for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive (even High performance trench technology for extremely low at very high frequencies), and DC/DC power supply designs R . DS(ON) with higher overall efficiency. 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FDP6670AL FDB6670AL Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1) 80 A D - Pulsed (Note 1) 240 P Total Power Dissipation @ T = 25°C 75 W D C Derate above 25°C 0.5 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 275 °C L 1/8" from case for 5 seconds THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 2 °C/W JC q Thermal Resistance, Junction-to-Ambient 62.5 °C/W R JA q FDP6670AL Rev.C © 1998
