FDB6021P ,20V P-Channel 1.8V Specified PowerTrench MOSFETApplications • Critical DC electrical parameters specified at • Battery management elevated temper ..
FDB6021P ,20V P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel power MOSFET uses Fairchild’s low • –28 A, –20 V. R = 30 mΩ @ V = 4.5 V DS ..
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FDB6021P
20V P-Channel 1.8V Specified PowerTrench MOSFET
FDP6021P/FDB6021P April 2001 PRELIMINARY FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low • –28 A, –20 V. R = 30 mΩ @ V = 4.5 V DS(ON) GS voltage PowerTrench process. It has been optimized for R = 40 mΩ @ V = 2.5 V DS(ON) GS power management applications. R = 65 mΩ @ V = 1.8 V DS(ON) GS Applications • Critical DC electrical parameters specified at • Battery management elevated temperature • Load switch • High performance trench technology for extremely • Voltage regulator low R DS(ON) • 175°C maximum junction temperature rating . S D G G G S TO-263AB TO-220 D FDP Series FDB Series S D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ± 8 V GSS I Drain Current – Continuous (Note 1) –28 A D – Pulsed (Note 1) –80 P D Total Power Dissipation @ T = 25°C 37 W C Derate above 25°C 0.25 W°C T , T Operating and Storage Junction Temperature Range –65 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case 4 θJC °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDP6021P FDP6021P Tube n/a 45 FDB6021P FDB6021P 13” 24mm 800 units FDP6021P/FDB6021P Rev B(W) 2001
