FDB52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDD ..
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FDB52N20
N-Channel UniFETTM MOSFET 200V, 52A, 49m?
TM FDB52N20 N-Channel UniFET MOSFET March 2013 FDB52N20 TM N-Channel UniFET MOSFET 500 V, 52 A, 49 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 49 m (Max.) V = 10 V, I = 26 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 49 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 66 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D D G G 2 D -PAK S S Absolute Maximum Ratings Symbol Parameter FDB52N20 Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25C) 52 A D C - Continuous (T = 100C) 33 A C (Note 1) I Drain Current - Pulsed 208 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 2520 mJ AS (Note 1) I Avalanche Current 52 A AR (Note 1) E Repetitive Avalanche Energy 35.7 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 357 W D C - Derate above 25C 2.86 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB52N20 Unit R Thermal Resistance, Junction-to-Case, Max. 0.35 JC R * Thermal Resistance, Junction-to-Ambient*, Max. 40 C/W JA R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 1 FDB52N20 Rev. C0
