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FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
FDP4020P September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features • -16 A, -20 V. R = 0.08 Ω @ V = -4.5 V This P-Channel low threshold MOSFET has been DS(on) GS R = 0.11 Ω @ V = -2.5 V. designed for use as a linear pass element for low voltage DS(on) GS outputs. In addition, the part may be used as a low voltage • Critical DC electrical parameters specified at elevated load switch when switching outputs on or off for power temperature. management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. • High density cell design for extremely low R DS(on) . 2 • TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. • 175°C maximum junction temperature rating. S G D T = 25°C unless otherwise noted Absolute Maximum Ratings A FDP4020P FDB4020P Symbol Parameter Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous -16 A D - Pulsed -48 P Total Power Dissipation @ T = 25 C 37.5 W D C ° Derate above 25C0.25 W/ C ° ° T , T Operating and Storage Junction Temperature Range -65 to +175 C J STG ° Thermal Characteristics R Thermal Resistance, Junction-to- Case 4 C/W JC ° θ R Thermal Resistance, Junction-to- Ambient (Note 1) 62.5 40 C/W JA ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDP4020P FDP4020P 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDP4020P Rev. B
