FDB3672 ,100V N-Channel PowerTrench MOSFETApplicationsr = 24mΩ (Typ.), V = 10V, I = 44A • DC/DC converters and Off-Line UPSDS(ON) GS DQ (to ..
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FDB42AN15A0 ,N-Channel PowerTrench ?MOSFET 150V, 35A, 42mOhmApplications•r = 36mΩ (Typ.), V = 10V, I = 12A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDB44N25 ,N-Channel UniFETTM MOSFET 250V, 44A, 69m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDD ..
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FMMT619TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
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FDB3672
100V N-Channel PowerTrench MOSFET
FDB3672 July 2004 FDB3672 ® N-Channel PowerTrench MOSFET 100V, 44A, 28mΩ Features Applications r = 24mΩ (Typ.), V = 10V, I = 44A • DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 24nC (Typ.), V = 10V g GS • Distributed Power Architectures and VRMs Low Miller Charge • Primary Switch for 24V and 48V Systems Low Q Body Diode RR • High Voltage Synchronous Rectifier Optimized efficiency at high frequencies • Direct Injection / Diesel Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 • 42V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82760 DRAIN D (FLANGE) GATE SOURCE G TO-263AB FDB SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 44 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 31 A D C GS o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 7.2 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 120 mJ AS Power dissipation 120 W P D o o Derate above 25C0.8W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 1.25 C/W θJC o R Thermal Resistance Junction to Ambient TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 FDB3672 Rev. A
