FDB3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9m OhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FDB3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16m OhmFDB3652 / FDP3652 / FDI3652July 2002FDB3652 / FDP3652 / FDI3652®N-Channel PowerTrench MOSFET100V, 6 ..
FDB3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16m OhmApplications•r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDB3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16m OhmApplications•r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDB3672 ,100V N-Channel PowerTrench MOSFETApplicationsr = 24mΩ (Typ.), V = 10V, I = 44A • DC/DC converters and Off-Line UPSDS(ON) GS DQ (to ..
FDB4020P ,P-Channel 2.5V Specified Enhancement Mode Field Effect Transistorapplications.• 175°C maximum junction temperature rating.SGDT = 25°C unless otherwise notedAbsolut ..
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT619-TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT625TA , 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT717 , 625mW power dissipation, IC up to 10A peak pulse current
FDB3632
N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9m Ohm
FDB3632 / FDP3632 / FDI3632 July 2002 FDB3632 / FDP3632 / FDI3632 ® N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications r = 7.5mΩ (Typ.), V = 10V, I = 80ADC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 84nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection System Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82784 Electronic Valve Train System D DRAIN SOURCE DRAIN DRAIN (FLANGE) SOURCE (FLANGE) GATE DRAIN GATE GATE G SOURCE TO-220AB DRAIN TO-262AB TO-263AB S FDP SERIES (FLANGE) FDI SERIES FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 111 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 12 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 393 mJ AS Power dissipation 310 W P D o o Derate above 25C2.07W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263, TO-262 0.48 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB3632 / FDP3632 / FDI3632 Rev. A1
