FDB33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDD●● ..
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FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
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FDB33N25
N-Channel UniFETTM MOSFET 250V, 33A, 94m?
TM FDB33N25 N-Channel UniFET MOSFET March 2013 FDB33N25 TM N-Channel UniFET MOSFET 250 V, 33 A, 94 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) @ V = 10 V, I 16.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche (Typ. 39 pF) •Low C rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D D ●● ◀◀ ▲▲ ●● G ●● G 2 D -PAK S S Absolute Maximum Ratings Symbol Parameter FDB33N25 Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 33 A D C - Continuous (T = 100C) 20.4 A C (Note 1) I Drain Current - Pulsed 132 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 918 mJ AS I Avalanche Current (Note 1) 33 A AR E Repetitive Avalanche Energy (Note 1) 23.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 235 W D C - Derate above 25C 1.89 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB33N25 Unit R Thermal Resistance, Junction-to-Case, Max. 0.53 JC R * Thermal Resistance, Junction-to-Ambient* 40 C/W JA R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 1 FDB33N25 Rev. C0
