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FDB28N30TM
N-Channel UniFETTM MOSFET 300V, 28A, 129m?
TM FDB28N30 N-Channel UniFET MOSFET March 2013 FDB28N30 TM N-Channel UniFET MOSFET 300 V, 28 A, 129 m Features Description TM ® •R = 108 m (Typ.) @ V = 10 V, I = 14 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 39 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 35 pF) provide better switching performance and higher avalanche energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction • RoHS Compliant (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications • Uninterruptible Power Supply • AC-DC Power Supply D D G G 2 D -PAK S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDB28N30 Unit V Drain to Source Voltage 300 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 28 C I Drain Current A D o - Continuous (T = 100 C) 19 C I Drain Current - Pulsed (Note 1) 112 A DM E Single Pulsed Avalanche Energy (Note 2) 588 mJ AS I Avalanche Current (Note 1) 28 A AR E Repetitive Avalanche Energy (Note 1) 25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 250 W C P Power Dissipation D o o - Derate above 25C2.0W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB28N30 Unit R Thermal Resistance, Junction to Case, Max. 0.5 JC o R * Thermal Resistance, Junction to Ambient* 40 C/W JA R Thermal Resistance, Junction to Ambient, Max. 62.5 JA *When mounted on the minimum pad size recommended (PCB Mount) 1 ©2007 FDB28N30 Rev. C0
