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FDB2710
N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?
® FDB2710 N-Channel PowerTrench MOSFET March 2013 FDB2710 tm ® N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features Description •R = 36.3 mΩ ( Typ.) @ V = 10 V, I = 25 A DS(on) GS D This N-Channel MOSFET is produced using Fairchild ® ® Semiconductor ’s PowerTrench process that has been tai- • High Performance Trench Technology for Extremely Low lored to minimize the on-state resistance while maintaining R DS(on) superior switching performance. • Low Gate Charge Applications • High Power and Current Handling Capability • Synchronous Rectification • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies D D G G D2-PAK S (TO-263) S Absolute Maximum Ratings Symbol Parameter FDB2710 Unit V Drain-Source Voltage 250 V DS V Gate-Source voltage ± 30 V GS I Drain Current - Continuous (T = 25°C) 50 A D C - Continuous (T = 100°C) 31.3 A C (Note 1) I Drain Current - Pulsed A DM See Figure 9 (Note 2) E Single Pulsed Avalanche Energy 145 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 260 W D C - Derate above 25°C 2.1 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB2710 Unit R Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W θJC R Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W θJA R * Thermal Resistance, Junction-to-Ambient, Max. * 62.5 °C/W θJA *When mounted on the minimum pad size recommended (PCB Mount) ©2006 1 FDB2710 Rev. C0
