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FDB2670
200V N-Channel PowerTrench MOSFET
FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 19 A, 200 V. R = 130 mΩ @ V = 10 V DS(ON) GS specifically for switching on the primary side in the isolated DC/DC converter application. Any application • Low gate charge (27 nC typical) requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • High performance trench technology for extremely RDS specifications. (ON) low R DS(ON) The result is a MOSFET that is easy and safer to drive • High power and current handling capability (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1) 19 A D – Pulsed (Note 1) 40 A P D Total Power Dissipation @ T = 25°C 93 W C Derate above 25°C 0.63 W°/C dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns T , T Operating and Storage Junction Temperature Range –65 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.6 θJC °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB2670 FDB2670 13’’ 24mm 800 units FDP2670 FDP2670 Tube n/a 45 units 2001 FDP2670/FDB2670 Rev C1(W)
