FDB2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDB2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDB2572 / FDP2572July 2002FDB2572 / FDP2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDB2614 ,N-Channel PowerTrench?MOSFET 200V, 62A, 27m?Applications • High Power and Current Handling Capability• Synchronous Rectificat ..
FDB2614 ,N-Channel PowerTrench?MOSFET 200V, 62A, 27m?Features Description•R = 22.9 mΩ ( Typ.) @ V = 10 V, I = 31 ADS(on) GS D This N-Channel MOSFET is p ..
FDB2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 19 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDB2710 ,N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?Applications • High Power and Current Handling Capability• Synchronous Rectificat ..
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FMMT618 , NPN SILICON POWER (SWITCHING) TRANSISTORS
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT619-TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FDB2572
N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhm
FDB2572 / FDP2572 July 2002 FDB2572 / FDP2572 ® N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications r = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 26nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection System Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82860 Electronic Valve Train System D DRAIN (FLANGE) SOURCE GATE DRAIN GATE G DRAIN SOURCE (FLANGE) TO-263AB TO-220AB FDB SERIES FDP SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 29 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 20 A D C GS o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 4 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 36 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220,TO-263 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB2572 / FDP2572 Rev. A2
