FDB10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhmApplications•r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDB13AN06A0 ,N-Channel PowerTrench MOSFET, 60V, 62A, 0.0135 OhmsApplications•r = 11.5mΩ (Typ.), V = 10V, I = 62A Motor / Body Load ControlDS(ON) GS DQ (tot) = 2 ..
FDB14AN06LA0 ,N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK PackageApplications•r = 12.8mΩ (Typ.), V = 5V, I = 60A Motor / Body Load ControlDS(ON) GS DQ (tot) = 24 ..
FDB20AN06A0 ,N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohmApplications•r = 17mΩ (Typ.), V = 10V, I = 45A Motor / Body Load ControlDS(ON) GS DQ (tot) = 15n ..
FDB24AN06LA0 ,60V N-Channel PowerTrench MOSFETApplications•r = 20mΩ (Typ.), V = 5V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 16nC ..
FDB2532 ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FMMT618 , NPN SILICON POWER (SWITCHING) TRANSISTORS
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT619-TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FDB10AN06A0
N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhm
FDB10AN06A0 / FDP10AN06A0 July 2002 FDB10AN06A0 / FDP10AN06A0 ® N-Channel PowerTrench MOSFET 60V, 75A, 10.5mΩ Features Applications •r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load Control DS(ON) GS D Q (tot) = 28nC (Typ.), V = 10VABS Systems g GS Low Miller ChargePowertrain Management Low Qrr Body DiodeInjection Systems UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82560 D DRAIN GATE SOURCE (FLANGE) DRAIN G GATE DRAIN SOURCE (FLANGE) S TO-220AB TO-263AB FDP SERIES FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 75 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 54 A D C GS o o Continuous (T = 25 C, V = 10V) with R = 43 C/W) 12 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 429 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB10AN06A0 / FDP10AN06A0 Rev. A
