FDB070AN06A0 ,N-Channel PowerTrench MOSFET 60V, 80A, 7mOhmFDB070AN06A0 / FDP070AN06A0March 2003FDB070AN06A0 / FDP070AN06A0®N-Channel PowerTrench MOSFET60V, ..
FDB070AN06A0 ,N-Channel PowerTrench MOSFET 60V, 80A, 7mOhmApplications•r = 6.1mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 51 ..
FDB10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhmApplications•r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDB13AN06A0 ,N-Channel PowerTrench MOSFET, 60V, 62A, 0.0135 OhmsApplications•r = 11.5mΩ (Typ.), V = 10V, I = 62A Motor / Body Load ControlDS(ON) GS DQ (tot) = 2 ..
FDB14AN06LA0 ,N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK PackageApplications•r = 12.8mΩ (Typ.), V = 5V, I = 60A Motor / Body Load ControlDS(ON) GS DQ (tot) = 24 ..
FDB20AN06A0 ,N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohmApplications•r = 17mΩ (Typ.), V = 10V, I = 45A Motor / Body Load ControlDS(ON) GS DQ (tot) = 15n ..
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
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FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
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FDB070AN06A0
N-Channel PowerTrench MOSFET 60V, 80A, 7mOhm
FDB070AN06A0 / FDP070AN06A0 March 2003 FDB070AN06A0 / FDP070AN06A0 ® N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications •r = 6.1mΩ (Typ.), V = 10V, I = 80A Motor / Body Load Control DS(ON) GS D Q (tot) = 51nC (Typ.), V = 10V ABS Systems g GS Low Miller Charge Powertrain Management Low Q Body Diode Injection Systems RR UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82567 D DRAIN SOURCE GATE (FLANGE) DRAIN GATE G DRAIN SOURCE (FLANGE) TO-220AB TO-263AB S FDP SERIES FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 97 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 15 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 190 mJ AS Power dissipation 175 W P D o o Derate above 25C1.17W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220,TO-263 0.86 C/W θJC o R Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2003 FDB070AN06A0 / FDP070AN06A0 Rev. B
