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FDB039N06
N-Channel PowerTrench?MOSFET 60V, 174A, 3.9m?
® FDB039N06 N-Channel PowerTrench MOSFET March 2013 FDB039N06 ® N-Channel PowerTrench MOSFET 60 V, 174 A, 3.9 mΩ Features General Description •R = 2.95 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® ® Semiconductor ’s advanced PowerTrench process that has • Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor drives and Uninterruptible Power Supplies • Renewable system D D G 2 D -PAK G S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDB039N06 Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GSS o -Continuous (T = 25 C, Silicion Limited) 174* C o I Drain Current -Continuous (T = 100 C, Silicion Limited) 123* A D C o -Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 696 A DM E Single Pulsed Avalanche Energy (Note 2) 872 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns o (T = 25 C) 231 W C P Power Dissipation D o o - Derate above 25C1.54W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDB039N06 Unit R Thermal Resistance, Junction to Case, Max. 0.65 θJC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R θJA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 ©2009 1 FDB039N06 Rev. C1