FDA70N20 ,N-Channel UniFETTM MOSFET 200V, 70A, 35m?FeaturesDescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage • R = 35 mΩ (Max.) ..
FDA79N15 , 150V N-Channel MOSFET
FDA8440 ,N-Channel Logic Level PowerTrench?MOSFET 40V, 10A, 2.1m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDB031N08 ,N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?Features Description•R = 2.4 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
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FDA70N20
N-Channel UniFETTM MOSFET 200V, 70A, 35m?
TM FDA70N20 N-Channel UniFET MOSFET April 2013 FDA70N20 TM N-Channel UniFET MOSFET 200 V, 70 A, 35 mΩ Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage • R = 35 mΩ (Max.) @ V = 10 V, I = 35 A D DS(on) GS MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 66 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 89 pF) provide better switching performance and higher avalanche • 100% avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.. • Uninterruptible Power Supply • AC-DC Power Supply D {{ zz zz G{{ zz G D S {{ S TO-3PN Absolute Maximum Ratings Symbol Parameter FDA70N20 Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25°C) 70 A D C - Continuous (T = 100°C) 45 A C (Note 1) I Drain Current - Pulsed 280 A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1742 mJ AS I Avalanche Current (Note 1) 70 A AR E Repetitive Avalanche Energy (Note 1) 41.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 417 W D C - Derate above 25°C 3.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA70N20 Unit R Thermal Resistance, Junction-to-Case, Max. 0.3 °C/W θJC 0.24 R Thermal Resistance, Case-to-Sink, Typ. °C/W θCS R Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W θJA ©2005 1 FDA70N20 Rev. C0
