FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic PDP TVlamp ballasts. Un ..
FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?Features DescriptionTM ®• R = 49 mΩ (Max.) @ V = 10 V, I = 29.5 A UniFET MOSFET is Fairchild Semic ..
FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?applications such as power factor correction
FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?TMFDA59N25 N-Channel UniFET MOSFETApril 2013FDA59N25 TMN-Channel UniFET MOSFET 250 V, 59 A, 49 mΩ
FDA59N30 ,N-Channel UniFETTM MOSFET 300V, 59A, 56m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 56 m (Max.) ..
FDA69N25 ,N-Channel UniFETTM MOSFET 250V, 69A, 41m?applications such as PFC, FPD TV power, ATX and lighting ballasts.•PDP TV• Uninterruptible Power Su ..
FMMT5400 , SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS
FMMT549 ,Discrete
FMMT549 ,Discrete
FMMT558TA , 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
FMMT589 , PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FDA59N25
N-Channel UniFETTM MOSFET 250V, 59A, 49m?
TM FDA59N25 N-Channel UniFET MOSFET April 2013 FDA59N25 TM N-Channel UniFET MOSFET 250 V, 59 A, 49 mΩ Features Description TM ® • R = 49 mΩ (Max.) @ V = 10 V, I = 29.5 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage D DS(on) GS MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 63 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 70 pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic PDP TV lamp ballasts. Uninterruptible Power Supply AC-DC Power Supply D {{ zz G zz G {{ zz D S TO-3PN {{ S Absolute Maximum Ratings Symbol Parameter FDA59N25 Unit V Drain-Source Voltage 250 V DSS (Note 1, 2) V Repetitive Avalanche Voltage 300 V DS(Avalanche) I Drain Current - Continuous (T = 25°C) 59 A D C - Continuous (T = 100°C) 35 A C (Note 1) I Drain Current - Pulsed 236 A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1458 mJ AS I Avalanche Current (Note 1) 59 A AR E Repetitive Avalanche Energy (Note 1) 39.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 392 W D C - Derate above 25°C 3.2 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Unit FDA59N25 R Thermal Resistance, Junction-to-Case, Max. 0.32 °C/W θJC R Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W θCS R Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W θJA ©2005 1 FDA59N25 Rev. C0
