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FDA38N30
N-Channel UniFETTM MOSFET 300V, 38A, 85m?
TM FDA38N30 N-Channel UniFET MOSFET March 2013 FDA38N30 TM N-Channel UniFET MOSFET 300 V, 38 A, 85 m Features Description TM ® •R = 70 m (Typ.) @ V = 10 V, I = 19 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 60 nC) This MOSFET is tailored to reduce on-state resistance, and to •Low C (Typ. 60 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction • ESD Improved Capability (PFC), flat panel display (FPD) TV power, ATX and electronic •RoHS Compliant lamp ballasts. Applications •PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDA38N30 Unit V Drain to Source Voltage 300 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 38 C I Drain Current A D o - Continuous (T = 100 C) 22 C (Note 1) I - Pulsed 150 A DM Drain Current (Note 2) E Single Pulsed Avalanche Energy 1200 mJ AS I Avalanche Current (Note 1) 38 A AR E Repetitive Avalanche Energy (Note 1) 31 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 312 C W P Power Dissipation D o - Derate above 25 C 2.5 o W/ C T Operating and Storage Temperature Range -55 to +150 C T J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA38N30 Unit R Thermal Resistance, Junction-to-Case, Max. 0.4 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA ©2011 FDA38N30 Rev. C0
