FDA28N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 28A, 175m?ApplicationsThis device family is suitable for switching power converter appli-•PDP TVcations such ..
FDA28N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 28A, 175m?Features DescriptionTM ®•R = 140 m (Typ.) @ V = 10 V, I = 14 A UniFET MOSFET is Fairchild Semicon ..
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FDA28N50F
N-Channel UniFETTM FRFET?MOSFET 500V, 28A, 175m?
TM ® FDA28N50F N-Channel UniFET FRFET MOSFET March 2013 FDA28N50F TM ® N-Channel UniFET FRFET MOSFET 500 V, 28 A, 175 m Features Description TM ® •R = 140 m (Typ.) @ V = 10 V, I = 14 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 80 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C (Typ. 38 pF) rss energy strength. The body diode’s reverse recovery performance ® • 100% Avalanche Tested of UniFET FRFET MOSFET has been enhanced by lifetime control. Its t is less than 100nsec and the reverse dv/dt immu- rr • Improved dv/dt Capability nity is 15V/ns while normal planar MOSFETs have over 200nsec • RoHS Compliant and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. Applications This device family is suitable for switching power converter appli- •PDP TV cations such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDA28N50F Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 28 C I Drain Current A D o - Continuous (T = 100 C) 17 C I Drain Current - Pulsed (Note 1) 112 A DM E Single Pulsed Avalanche Energy (Note 2) 2352 mJ AS I Avalanche Current (Note 1) 28 A AR E Repetitive Avalanche Energy (Note 1) 31 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 310 W C P Power Dissipation D o o - Derate above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA28N50F Unit R Thermal Resistance, Junction to Case, Max. 0.4 JC o R Thermal Resistance, Case to Sink, Typ. 0.24 C/W CS Thermal Resistance, Junction to Ambient, Max. 40 R JA 1 ©2012 FDA28N50F Rev.C0
