FDA18N50 ,N-Channel UniFETTM MOSFET 500V, 19A, 265m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 265 m (Max. ..
FDA18N50 ,N-Channel UniFETTM MOSFET 500V, 19A, 265m?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDA20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230mOhmsApplications•PDP TV• Uninterruptible Power Supply• AC-DC Power SupplyDGGTO-3P DS SAbsolut ..
FDA20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230mOhmsFeatures DescriptionTM ®•R = 230 m (Max.) @ V = 10 V, I = 10 A UniFET MOSFET is Fairchild Semicon ..
FDA24N50 ,N-Channel UniFETTM MOSFET 500V, 24A, 190m?Applications•PDP TV• Uninterruptible Power Supply• AC-DC Power SupplyDGGTO-3PN D SSoMOSFET ..
FDA24N50 ,N-Channel UniFETTM MOSFET 500V, 24A, 190m?Features DescriptionTM ®•R = 160 m (Typ.) @ V = 10 V, I = 12 A UniFET MOSFET is Fairchild Semicon ..
FMMT491 ,Conductor Holdings Limited - NPN Silicon Epitaxial Planar Transistor
FMMT491 ,Conductor Holdings Limited - NPN Silicon Epitaxial Planar Transistor
FMMT491TC , 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
FMMT493ATA , 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR
FMMT5400 , SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS
FMMT549 ,Discrete
FDA18N50
N-Channel UniFETTM MOSFET 500V, 19A, 265m?
TM FDA18N50 N-Channel UniFET MOSFET April 2013 FDA18N50 TM N-Channel UniFET MOSFET 500 V, 19 A, 265 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 265 m (Max.) @ V = 10 V, ID = 9.5 A DS(on) GS MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 25 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D G G TO-3PN D S S Absolute Maximum Ratings Symbol Parameter FDA18N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 19 A D C - Continuous (T = 100C) 11.4 A C (Note 1) I Drain Current - Pulsed 76 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 945 mJ AS I Avalanche Current (Note 1) 19 A AR E Repetitive Avalanche Energy (Note 1) 23 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 239 W D C - Derate above 25C 1.92 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA18N50 Unit R Thermal Resistance, Junction-to-Case, Max. 0.52 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 40 JA ©2006 1 FDA18N50 Rev. C0
