FCPF16N60 Features DescriptionTM•650V @T = 150°C SuperFET is, Fairchild’s proprietary, new generation of high ..
FCPF16N60NT ,N-Channel SupreMOS?MOSFET 600V, 16A, 199m?Features Description® ®•R = 170 mΩ (Typ.) @ V = 10 V, I = 8 A The SupreMOS MOSFET is Fairchild Semi ..
FCPF20N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCPF22N60NT ,N-Channel SupreMOS?MOSFET 600V, 22A, 165m?Features Descriptiono ® ®•BV > 650V @ T = 150 C The SupreMOS MOSFET is Fairchild Semiconductor ’s n ..
FCPF7N60 ,600V N-Channel SuperFETFCP7N60 / FCPF7N60 600V N-Channel MOSFETTMSuperFETFCP7N60 / FCPF7N60 600V N-Channel MOSFET
FCPF9N60NT ,N-Channel SupreMOS?MOSFET 600V, 9A, 385m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FMA7A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMB-2204 , Schottky Barrier Diodes
FMB-2204 , Schottky Barrier Diodes
FCPF16N60
FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 TM SuperFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description TM •650V @T = 150°C SuperFET is, Fairchild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.22Ω ds(on) balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge performance. This advanced technology has been tailored to minimize • Low effective output capacitance (typ. Coss.eff=110pF) conduction loss, provide superior switching performance, and • 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC • RoHS Compliant power conversion in switching mode operation for system miniaturization and higher efficiency. D G TO-220 TO-220F G D G S D S FCP Series FCPF Series S Absolute Maximum Ratings Symbol Parameter FCP16N60 FCPF16N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 16 16* A D C - Continuous (T = 100°C) 10.1 10.1* A C (Note 1) I Drain Current - Pulsed A DM 48 48* V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 450 mJ AS I Avalanche Current (Note 1) 16 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 167 37.9 W D C - Derate above 25°C 1.33 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP16N60 FCPF16N60 Unit R Thermal Resistance, Junction-to-Case 0.75 3.3 °C/W θJC R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2008 1 FCP16N60 / FCPF16N60 Rev. B1
