FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?Features Description® ®•R = 255 mΩ (Typ.) @ V = 10 V, I = 5.4 A The SupreMOS MOSFET is Fairchild Se ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FCPF11N60T , General Description
FCPF11N60T , General Description
FCPF13N60NT ,N-Channel SupreMOS?MOSFET 600V, 13A, 258m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FCPF16N60 Features DescriptionTM•650V @T = 150°C SuperFET is, Fairchild’s proprietary, new generation of high ..
FMA7A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMB-2204 , Schottky Barrier Diodes
FMB-2204 , Schottky Barrier Diodes
FCPF11N60NT
N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?
FCP11N60N / FCPF11N60NT N-Channel MOSFET March 2013 FCP11N60N / FCPF11N60NT ® N-Channel SupreMOS MOSFET 600 V, 10.8 A, 299 mΩ Features Description ® ® •R = 255 mΩ (Typ.) @ V = 10 V, I = 5.4 A The SupreMOS MOSFET is Fairchild Semiconductor ’s next DS(on) GS D generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Q = 27.4 nC) g employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and • Low Effective Output Capacitance (Typ. C .eff = 130 pF) oss precise process control provides lowest Rsp on-resistance, • 100% Avalanche Tested superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- • RoHS Compliant verter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply D G TO-220 TO-220F G D S G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCP11N60N FCPF11N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 10.8 10.8* C I Drain Current A D o -Continuous (T = 100 C) 6.8 6.8* C I Drain Current - Pulsed (Note 1) 32.4 32.4* A DM E Single Pulsed Avalanche Energy (Note 2) 201.7 mJ AS I Avalanche Current 3.7 A AR E Repetitive Avalanche Energy 0.94 mJ AR MOSFET dv/dt Ruggedness 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 94.0 32.1 W C P Power Dissipation D o o - Derate above 25C0.750.26W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP11N60N FCPF11N60NT Unit R Thermal Resistance, Junction to Case 1.33 3.9 θJC o R Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 C/W θCS R Thermal Resistance, Junction to Ambient 62.5 62.5 θJA ©2009 1 FCP11N60N / FCPF11N60NT Rev. C0
