FCP7N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCP9N60N ,N-Channel SupreMOS?MOSFET 600V, 9A, 385m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FCPF11N60 ,600V N-Channel SuperFETFeaturesTMSuperFET is a new generation of high voltage MOSFETs • 650V @T = 150°Cjfrom Fairchild wit ..
FCPF11N60.. ,600V N-Channel SuperFETFCP11N60/FCPF11N60TMSuperFETFCP11N60/FCPF11N60
FCPF11N60F ,600V N-Channel MOSFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?Features Description® ®•R = 255 mΩ (Typ.) @ V = 10 V, I = 5.4 A The SupreMOS MOSFET is Fairchild Se ..
FMA2A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMB-2204 , Schottky Barrier Diodes
FCP7N60-FCPF7N60
600V N-Channel SuperFET
FCP7N60 / FCPF7N60 600V N-Channel MOSFET TM SuperFET FCP7N60 / FCPF7N60 600V N-Channel MOSFET Features Description TM • 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.53Ω DS(on) balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Q = 25nC) lower gate charge performance. g • Low effective output capacitance (typ. C .eff = 60pF) This advanced technology has been tailored to minimize con- oss duction loss, provide superior switching performance, and with- • 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. D ! ! "" !! "" "" G! ! "" TO-220 TO-220F G D G S D S ! ! S Absolute Maximum Ratings Symbol Parameter FCP7N60 FCPF7N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 7 7* A D C - Continuous (T = 100°C) 4.4 4.4* A C (Note 1) I Drain Current - Pulsed A DM 21 21* V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 230 mJ AS I Avalanche Current (Note 1) 7A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 83 31 W D C - Derate above 25°C 0.67 0.25 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP7N60 FCPF7N60 Unit R Thermal Resistance, Junction-to-Case 1.5 4.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2005 1 FCP7N60 / FCPF7N60 Rev. A
