FCP22N60N ,N-Channel SupreMOS?MOSFET 600V, 22A, 165m?Features Descriptiono ® ®•BV > 650V @ T = 150 C The SupreMOS MOSFET is Fairchild Semiconductor ’s n ..
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FCP7N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCP9N60N ,N-Channel SupreMOS?MOSFET 600V, 9A, 385m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
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FCP22N60N
N-Channel SupreMOS?MOSFET 600V, 22A, 165m?
FCP22N60N / FCPF22N60NT N-Channel MOSFET March 2013 FCP22N60N / FCPF22N60NT ® N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description o ® ® •BV > 650V @ T = 150 C The SupreMOS MOSFET is Fairchild Semiconductor ’s next DSS J generation of high voltage super-junction (SJ) technology •R = 140 mΩ (Typ.) @ V = 10 V, I = 11 A DS(on) GS D employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and • Ultra Low Gate Charge (Typ. Q = 45 nC) g precise process control provides lowest Rsp on-resistance, • Low Effective Output Capacitance (Typ. C .eff = 196.4 pF) oss superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- • 100% Avalanche Tested verter applications such as PFC, server/telecom power, FPD TV • RoHS Compliant power, ATX power and industrial power applications. Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply D G TO-220 TO-220F G D S G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCP22N60N FCPF22N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±45 V GSS o Continuous (T = 25 C) 22 22* C I Drain Current A D o Continuous (T = 100 C) 13.8 13.8* C I Drain Current Pulsed (Note 1) 66 66* A DM E Single Pulsed Avalanche Energy (Note 2) 672 mJ AS I Avalanche Current 7.3 A AR E Repetitive Avalanche Energy 2.75 mJ AR Peak Diode Recovery dv/dt (Note 3) 20 dv/dt V/ns MOSFET dv/dt 100 o (T = 25 C) 205 39 W C P Power Dissipation D o o Derate above 25 C 1.64 0.31 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP22N60N FCPF22N60NT Unit R Thermal Resistance, Junction to Case 0.61 3.2 θJC o R Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 C/W θCS R Thermal Resistance, Junction to Ambient 62.5 62.5 θJA ©2009 1 FCP22N60N / FCPF22N60NT Rev. C0
