FCP16N60N ,N-Channel SupreMOS?MOSFET 600V, 16A, 199m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
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FMA1A , −100mA / −50V Complex digital transistors (with built-in resistors)
FMA2A , Emitter common (dual digital transistors)
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FMA7A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
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FCP16N60N
N-Channel SupreMOS?MOSFET 600V, 16A, 199m?
FCP16N60N / FCPF16N60NT N-Channel MOSFET March 2013 FCP16N60N / FCPF16N60NT ® N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description ® ® •R = 170 mΩ (Typ.) @ V = 10 V, I = 8 A The SupreMOS MOSFET is Fairchild Semiconductor ’s next DS(on) GS D generation of high voltage super-junction (SJ) technology • Ultra Low gate Charge (Typ. Q = 40.2 nC) g employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and • Low Effective Output Capacitance (Typ. C .eff = 176 pF) oss precise process control provides lowest Rsp on-resistance, • 100% Avalanche Tested superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- • RoHS Compliant verter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply D G TO-220 TO-220F S G D S G D S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCP16N60N FCPF16N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 16.0 16.0* C I Drain Current A D o -Continuous (T = 100 C) 10.1 10.1* C I Drain Current - Pulsed (Note 1) 48.0 48.0* A DM E Single Pulsed Avalanche Energy (Note 2) 355 mJ AS I Avalanche Current 5.3 A AR E Repetitive Avalanche Energy 1.34 mJ AR MOSFET dv/dt Ruggedness 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25C) 134.435.7W C P Power Dissipation D o o - Derate above 25C1.080.29W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP16N60N FCPF16N60NT Unit R Thermal Resistance, Junction to Case 0.93 3.5 θJC o R Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 C/W θCS R Thermal Resistance, Junction to Ambient 62.5 62.5 θJA ©2009 1 FCP16N60N / FCPF16N60NT Rev. C0
