FCI11N60 ,600V N-Channel MOSFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
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FCI11N60
600V N-Channel MOSFET
FCI11N60 600V N-Channel MOSFET TM SuperFET FCI11N60 600V N-Channel MOSFET Features Description TM • 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.32Ω DS(on) balance mechanism for outstanding low on-resistance and • Ultra Low Gate Charge (typ. Q = 40nC) lower gate charge performance. g • Low Effective Output Capacitance (typ. C eff. = 95pF) This advanced technology has been tailored to minimize con- oss duction loss, provide superior switching performance, and with- • 100% Avalanche Tested stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. D ! ! "" !!"" "" G ! ! "" GS D ! ! S Absolute Maximum Ratings Symbol Parameter FCI11N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 11 A D C - Continuous (T = 100°C) 7 A C (Note 1) I Drain Current - Pulsed A DM 33 V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 340 mJ AS (Note 1) I Avalanche Current 11 A AR (Note 1) E Repetitive Avalanche Energy 12.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 125 W D C - Derate above 25°C 1.0 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCI11N60 Unit R Thermal Resistance, Junction-to-Case 1.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient 62.5 °C/W θJA ©2005 1 FCI11N60 Rev. A
