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FCH47N60N
N-Channel SupreMOS?MOSFET 600V, 47A, 62m?
FCH47N60N N-Channel MOSFET March 2013 FCH47N60N ® N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o ® ® • 650 V @ TJ = 150 C The SupreMOS MOSFET is Fairchild Semiconductor ’s next generation of high voltage super-junction (SJ) technology •R = 51.5 mΩ (Typ.)@ V = 10V, I = 23.5 A DS(on) GS D employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and • Ultra Low Gate Charge (Typ.Q = 115 nC) g precise process control provides lowest Rsp on-resistance, • Low Effective Output Capacitance (Typ. C .eff = 511 pF) oss superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- • 100% Avalanche Tested verter applications such as PFC, server/telecom power, FPD TV • RoHS Compliant power, ATX power and industrial power applications. Application • Solar Inverter • AC-DC Power Supply D G TO-247 G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FCH47N60N Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 47 C I Drain Current A D o -Continuous (T = 100 C) 29.7 C I Drain Current - Pulsed (Note 1) 141 A DM E Single Pulsed Avalanche Energy (Note 2) 3068 mJ AS I Avalanche Current 15.7 A AR E Repetitive Avalanche Energy 3.7 mJ AR MOSFET dv/dt Ruggedness 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 368 W C P Power Dissipation D o o - Derate above 25C2.94W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCH47N60N Unit R Thermal Resistance, Junction to Case 0.34 θJC o R Thermal Resistance, Case to Heat Sink (Typical) 0.24 C/W θCS R Thermal Resistance, Junction to Ambient 40 θJA ©2010 1 FCH47N60N Rev. C2
