FCD7N60 ,N-Channel SuperFET?MOSFET 600V, 7A, 600m?applications.Application• LCD/LED TV and Monitor• Lighting• Solar Inverter• AC-DC Power SupplyDDGD- ..
FCF06A20 , FRD - Low Forward Voltage Drop
FCF06A40 , FRD - Low Forward Voltage Drop
FCF06A40 , FRD - Low Forward Voltage Drop
FCF10A20. , FRD - Low Forward Voltage Drop
FCF10A60 , FRD - Low Forward Voltage Drop
FM336 , V.34/Group 3 High Performance Fax Modem Family
FM336PLUS , V.34/Group 3 High Performance Fax Modem Family
FM340 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE RANGE 20 to 100 Volts CURRENT 3.0 Amperes)
FM340 , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE RANGE 20 to 100 Volts CURRENT 3.0 Amperes)
FM3540C ,4/5 Bit Multiplexed,1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile LatchesBlock DiagramNon_Mux_OutI[4:0]Y[4:0]Mux1SOPRAMux2SOPRBMXSB, MXSAIIC Read Logic Mux3MUXSELControl Lo ..
FM3540CM14 ,4/5 Bit Multiplexed/ 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile LatchesBlock DiagramNon_Mux_OutI[4:0]Y[4:0]Mux1SOPRAMux2SOPRBMXSB, MXSAIIC Read Logic Mux3MUXSELControl Lo ..
FCD7N60
N-Channel SuperFET?MOSFET 600V, 7A, 600m?
FCD7N60 N-Channel MOSFET March 2013 FCD7N60 ® N-Channel SuperFET MOSFET 600 V, 7 A, 600 mΩ Features Description ® ® • 650V @T = 150°C SuperFET MOSFET is Fairchild Semiconductor ’s first genera- J tion of high voltage super-junction (SJ) MOSFET family that is •Typ. R = 530 mΩ DS(on) utilizing charge balance technology for outstanding low on-resis- • Ultra Low Gate Charge (Typ. Q = 23 nC) tance and lower gate charge performance. This technology is tai- g lored to minimize conduction loss, provide superior switching • Low Effective Output Capacitance (Typ. C .eff = 60 pF) oss performance, dv/dt rate and higher avalanche energy. Conse- • 100% Avalanche Tested quently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV • RoHS Compliant power, ATX power and industrial power applications. Application • LCD/LED TV and Monitor • Lighting • Solar Inverter • AC-DC Power Supply D D G D-PAK GS S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCD7N60 Unit V Drain to Source Voltage 600 V DSS o -Continuous (T = 25 C) 7 C I Drain Current A D o -Continuous (T = 100 C) 4.4 C I Drain Current - Pulsed (Note 1) 21 A DM V Gate to Source Voltage ±30 V GSS E Single Pulsed Avalanche Energy (Note 2) 230 mJ AS I Avalanche Current (Note 1) 7A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 83 W C P Power Dissipation D o o - Derate above 25C0.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCD7N60 Unit o R Thermal Resistance, Junction to Case, Max 1.5 C/W θJC o R Thermal Resistance, Junction to Ambient, Max 83 C/W θJA ©2008 1 FCD7N60 Rev. C0
