FCA47N60 ,600V N-Channel MOSFETFCH47N60 / FCA47N60 600V N-Channel MOSFETTMSuperFETFCH47N60 / FCA47N60 600V N-Channel MOSFET
FCB11N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCB11N60TM ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCB20N60 ,600V N-Channel SuperFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCB20N60TM ,600V N-Channel SuperFETFCB20N60 600V N-Channel MOSFETTMSuperFETFCB20N60 600V N-Channel MOSFET
FCBS0550 ,Smart Power Module (SPM)General DescriptionIt is an advanced smart power module (SPM) that Fairchild has• UL Certified No.E ..
FM27C010VE ,1/048/576-Bit 128K x 8 High Performance CMOS EPROMFeaturesThe “Don’t Care” feature during read operations allows memoryexpansions from 1M to 8M bits ..
FM27C040Q120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMFM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM. . . . . . . . . January 2000FM27C040 ..
FM27C040Q120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMBlock DiagramData Outputs O - O0 7VCCGNDVPPOutput Enable,OEChip Enable, andOutputCE/PGMProgram Log ..
FM27C040Q-120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMFeaturesThe FM27C040 is a high performance, 4,194,304-bit Electrically High performance CMOSProgr ..
FM27C040Q-120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMFeaturesThe FM27C040 is a high performance, 4,194,304-bit Electrically High performance CMOSProgr ..
FM27C040Q-120 ,4/194/304-Bit 512K x 8 High Performance CMOS EPROMElectrical Characteristics Over operating range with V = VPP CCSymbol Parameter Test Conditions Min ..
FCA47N60 -FCH47N60
600V N-Channel MOSFET
FCH47N60 / FCA47N60 600V N-Channel MOSFET TM SuperFET FCH47N60 / FCA47N60 600V N-Channel MOSFET Features Description TM • 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.058Ω DS(on) balance mechanism for outstanding low on-resistance and • Ultra Low Gate Charge (typ. Q = 210nC) lower gate charge performance. g • Low Effective Output Capacitance (typ. C eff. = 420pF) This advanced technology has been tailored to minimize con- oss duction loss, provide superior switching performance, and with- • 100% avalanche tested stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. D ! ! "" !! "" "" ! ! G "" TO-247 TO-3P ! ! G D S GS D S Absolute Maximum Ratings Symbol Parameter FCH47N60 FCA47N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 47 A D C - Continuous (T = 100°C) 29.7 A C (Note 1) I Drain Current - Pulsed A DM 141 V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1800 mJ AS (Note 1) I Avalanche Current 47 A AR (Note 1) E Repetitive Avalanche Energy 41.7 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 417 W D C - Derate above 25°C 3.33 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit R Thermal Resistance, Junction-to-Case -- 0.3 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS ©2005 1 FCH47N60 / FCA47N60 Rev. A
