FCA35N60 ,N-Channel SuperFET?MOSFET 600V, 35A, 98m?Features Description® ®SuperFET MOSFET is Fairchild Semiconductor ’s first gener-• 650V @ T = 150°C ..
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FCA35N60
N-Channel SuperFET?MOSFET 600V, 35A, 98m?
FCA35N60 N-Channel MOSFET March 2013 FCA35N60 ® N-Channel SuperFET MOSFET 600 V, 35 A, 98 mΩ Features Description ® ® SuperFET MOSFET is Fairchild Semiconductor ’s first gener- • 650V @ T = 150°C J ation of high voltage super-junction (SJ) MOSFET family that is •Typ.R = 79 mΩ DS(on) utilizing charge balance technology for outstanding low on-resis- • Ultra Low Gate Charge (Typ. Q = 139 nC ) tance and lower gate charge performance.This technology is tai- g lored to minimize conduction loss, provide superior switching • Low Effective Output Capacitance (Typ. C .eff = 340 pF ) oss performance, dv/dt rate and higher avalanche energy. Conse- • 100% Avalanche Tested quently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD TV power, ATX power and industrial power applications. Applications • Solar Inverter • AC-DC Power Supply D G TO-3PN G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCA35N60 Unit V Drain to Source Voltage 600 V DSS V Gate-Soure voltage ±30 V GSS o -Continuous (T = 25 C) 35 C I Drain Current A D o -Continuous (T = 100 C) 22.2 C I Drain Current - Pulsed (Note 1) 105 A DM E Single Pulsed Avalanche Energy (Note 2) 1455 mJ AS I Avalanche Current (Note 1) 35 A AR E Repetitive Avalanche Energy (Note 1) 31.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 312.5 W C P Power Dissipation D o o - Derate above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R Thermal Resistance, Junction to Case - 0.4 θJC o R Thermal Resistance, Case-to-Heat Sink 0.24 - C/W θCS R Thermal Resistance, Junction to Ambient - 42 θJA ©2009 1 FCA35N60 Rev. C0
