FCA20N60F ,N-Channel SuperFET?FRFET?MOSFET 600V, 20A, 190m?Applicationssystem reliability.• LCD / LED / PDP TV• Solar Inverter• AC-DC Power SupplyDG GTO-3PNDS ..
FCA20N60S , Power Factor Correction Converter Design
FCA20N60S , Power Factor Correction Converter Design
FCA22N60N ,N-Channel SupreMOS?MOSFET 600V, 22A, 165m?applications.Application•PDP TV• Solar Inverter• AC-DC Power SupplyDGTO-3PNGS D SoMOSFET Maximum Ra ..
FCA35N60 ,N-Channel SuperFET?MOSFET 600V, 35A, 98m?Features Description® ®SuperFET MOSFET is Fairchild Semiconductor ’s first gener-• 650V @ T = 150°C ..
FCA47N60 ,600V N-Channel MOSFETFCH47N60 / FCA47N60 600V N-Channel MOSFETTMSuperFETFCH47N60 / FCA47N60 600V N-Channel MOSFET
FM25L256-S , 256Kb FRAM Serial 3V Memory - Extended Temp
FM25L512-DG , 512Kb FRAM Serial 3V Memory
FM25V01-GTR ,128-Kbit (16 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMFeatures Functional Overview256-Kbit ferroelectric random access memory (F-RAM) The FM25V02 is a 25 ..
FM25V02-GTR ,256-Kbit (32 K ?8) Serial (SPI) F-RAMCharacteristics ... 14Command Structure ....... 6 Power Cycle Timing . 16WREN - Set Write Enable La ..
FM25V05-GTR ,512-Kbit (64 K ?8) Serial (SPI) F-RAMFeatures Functional Overview512-Kbit ferroelectric random access memory (F-RAM) The FM25V05 is a 51 ..
FCA20N60F
N-Channel SuperFET?FRFET?MOSFET 600V, 20A, 190m?
® FCA20N60F N-Channel FRFET MOSFET March 2013 FCA20N60F ® ® N-Channel SuperFET FRFET MOSFET 600 V, 47 A, 70 mΩ Features Description ® ® SuperFET MOSFET is Fairchild Semiconductor ’s first gener- • 650 V @ T = 150°C J ation of high voltage super-junction (SJ) MOSFET family that is •Typ.R = 150 mΩ DS(on) utilizing charge balance technology for outstanding low on-resis- • Fast Recovery Type (Typ. T = 160 ns ) tance and lower gate charge performance.This technology is tai- rr lored to minimize conduction loss, provide superior switching • Ultra Low Gate Charge (Typ. Q = 75 nC ) g performance,dv/dt rate and higher avalanche energy. Conse- • Low Effective Output Capacitance (Typ. C .eff = 165 pF ) oss quently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD • 100% Avalanche Tested TV power, ATX power and industrial power applications. Super- • RoHS Compliant ® FET FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve Applications system reliability. • LCD / LED / PDP TV • Solar Inverter • AC-DC Power Supply D G G TO-3PN D S S Absolute Maximum Ratings Symbol Parameter FCA20N60F Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 20 A D C - Continuous (T = 100°C) 12.5 A C (Note 1) I Drain Current - Pulsed A DM 60 V Gate-Source voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 690 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns P Power Dissipation (T = 25°C) 208 W D C - Derate above 25°C 1.67 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCA20N60F Unit R Thermal Resistance, Junction-to-Case 0.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient 40 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2007 1 FCA20N60F Rev. C0
