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FA57SA50LC
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
International
TOR Rectifier
PD - 9165OA
FA57SA50LC
HEXFET© Power MOSFET
Fully Isolated Package
Easy to Use and Parallel
Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Gate Charge Device
Low Drain to Case Capacitance
VDSS = 500V
RDS(on) = 0.08n
ID: 57A
Low Internal Inductance
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all SOT-227
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, VGs @ 10V 57
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 36 A
IDM Pulsed Drain Current (D 228
PD @Tc = 25°C Power Dissipation 625 W
Linear Derating Factor 5.0 W/°C
VGS Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy© 725 ml
IAR Avalanche Current© 57 A
EAR Repetitive Avalanche Energy© 62.5 m]
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
Tu Operating Junction and -55 to + 150 'C
TSTG Storage Temperature Range
v.30 Insulation 1/Whstand Voltage (AC-RMS) 2.5 kV
Mounting torque, M4 srew 1.3 N.m
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.20
Recs Case-to-Sink, Flat, Greased Surface 0.05 - ''C/W
1
2/1/99
FA57SA50LC International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGs = 0V, ID = 1.0mA
M(Bmoss/ATJ Breakdown Voltage Temp. Coemcient - 0.62 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.08 Q VGS = 10V, ID = 34A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
git Fon/vard Transconductance 43 - - S VDs = 50V, ID = 34A
loss Drain-to-Source Leakage Current - - 50 pA Vos = 500V, VGS = 0V
- - 500 Vos = 400V, Veg = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
q, Total Gate Charge - 225 338 lo = 57A
Qgs Gate-to-Source Charge - 51 77 nC Vros = 400V
di Gate-to-Drain ("Miller") Charge - 98 147 Vss = 10V, See Fig. 6 and 13 ©
tu(on) Turn-On Delay Time - 32 - VDD = 250V
tr RiseTime - 152 - ns ID = 57A
td(off) Turn-Off Delay Time - 108 - Rs =2.0Q (Internal)
tr FallTime - 118 - Ro = 4.39, See Fig. 10 ©
LS Internal Source Inductance - 5.0 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 10000 - VGS = 0V
Coss Output Capacitance - 1500 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 57 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 228 integral reverse G
(Body Diode) C) p-n junction diode. S
I/so Diode Forward Voltage - - 1.3 V To = 25°C, ls = 57A, VGS = 0V ©
tn Reverse Recovery Time - 901 1351 ns To = 25°C, IF = 57A
G, Reverse Recovery Charge - 15 23 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © ISD I 57A, di/dt S 200A/ps, V00 3 V(BR)DSS,
max. junction temperature. (See fig. 11 ) TJS 150°C
© Starting To = 25°C, L = 446pH GD Pulse width 3 300ps; duty cycle S 2%.
Rs = 259, bus-- 57A. (See Figure 12)
2
