FA5331M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5331M ,Bipolar IC for power factor correctionBlock diagram1819.41.50.817.6– 0.25 – 0.12.54 0.5FA5332P9161819.21.30.71Pin Pin DescriptionNo. symb ..
FA5331M ,Bipolar IC for power factor correction0~15˚0~15˚Bipolar ICFA5331P(M)/FA5332P(M)FA5331P(M)/FA5332P(M)For Power Factor Correctionn Descript ..
FA5331P ,Bipolar IC For Power Factor CorrectionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5332M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5332P ,Bipolar IC for switching power supply controlFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FE1B ,Ultra Fast Sinterglass Diode Document Number 860682 Rev. 2, 28-Jan-03Average Forward Rectified Current (A)Peak Forward Surge Cu ..
FE1D ,GLASS PASSIVATED FAST EFFICIENT RECTIFIERFeatures • High temperature metallurgically bonded con-struction Cavity-free glass passivated jun ..
FE2B ,Ultra Fast Sinterglass Diode Document Number 860694 Rev. 2, 28-Jan-03FE2A to FE2DVISHAYVishay SemiconductorsOzone Depleting Sub ..
FE2C ,Ultra Fast Sinterglass DiodeElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Symbol ..
FE2D ,Ultra Fast Sinterglass DiodeFeatures • High temperature metallurgically bonded con-struction Cavity-free glass passivated jun ..
FE6D ,Super Fast Silicon Rectifiers Document Number 860724 Rev. 2, 28-Jan-03FE6A to FE6DVISHAYVishay SemiconductorsOzone Depleting Sub ..
FA5331M-FA5332M
