FA1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS iTa= 25 °c)
CHARACTEAISTiC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L4L-T2B ,Compound transistorFEATURES
. Resistors Built-in TYPE
.__2 ..,_. __.2 Ma
PACKAGE DIMENSIONS
in millimeters
..
FA1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta =25 °C)
CHARACTERISTIC SYMBOL TYP. MAX. A, UNIT 4 TEST CONDITIONS ..
FA1L4M-T1B ,Compound transistorFEATURES
0 Resistors Built-in TYPE
2.8i02
(Y15 'i', _ R1 =47 k9
E R1 R2 = 47 k9
R2 E
..
FA1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta =25 °C)
CHARACTERISTIC SYMBOL TYP. MAX. A, UNIT 4 TEST CONDITIONS ..
FA1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
TEST CONDITIONS
. Collector Cutoff ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FDT434 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(ON)• Low Dropout Regulator• High power and current handling capability in a• ..
FDT434P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications low R . DS(ON)• Low Dropout Regulator • High power and current handling capability in ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FDT439N ,N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor ..
FA1L4L-T1B-FA1L4L-T2B
