FA1L3M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
( Collector Cutoff Current. ICBO VCB = 50 V, IE = o
I ..
FA1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L3N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L3N-T2B ,Compound transistorFEATURES
in millimeters , 0 Resistors Built-in TYPE
_ C
2.8k0.2 V B
l RI R2 = 10 ki2
1,- R2 E
..
FA1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "m
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collector ..
FA1L3Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "m
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collector ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FA1L3M-T1B-FA1L3M-T2B
