FA1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C)
60
50
1 00
200
200
150 _
-55 to +150
TE ..
FA1F4Z-T2B ,Compound transistorFEATURES _
in millimeters i,', o Resistor Built-in TYPE
28:02 _ c
ttoils i B
. l, R1 = 22 kf2
..
FA1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
( Collector Cutoff Current. ICBO VCB = 50 V, IE = o
I ..
FA1L3M-T1B ,Compound transistorFEATURES
1 in millimeters O Resistors Built-in TYPE
2.8t0.2, . c
.65tN , B
o .15 ' R1 = 4.7 kg
..
FA1L3M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
( Collector Cutoff Current. ICBO VCB = 50 V, IE = o
I ..
FA1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETapplications: load switching and power management, battery charging and protection circuits.
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r =105mΩ at V = -10V, I = -2.9A These P-channel logic level specified MOSF ..
FDS9958 ,-60V Dual P-Channel PowerTrench?MOSFET®FDS9958 Dual P-Channel PowerTrench MOSFETJuly 2007FDS9958 ..
FDT3612 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a widely used surface mount package • ..
FA1F4Z-T1B-FA1F4Z-T2B
