FA1F4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . _ I . . TEST CONDITIONS
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FA1F4M-T1B ,Compound transistorFA1 F4M
FA1F4M-T2B ,Compound transistorFA1 F4M
FA1F4N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °c)
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Collector to Base Voltage VCBO 60
Collector to E ..
FA1F4N-T1B ,Compound transistorFEATURES
. Resistors Built-in TYPE
o Complementary to FN1F4N
RI=22ki2
R2 =47 kn
ABSOLUTE ..
FA1F4N-T2B ,Compound transistorNEC
- DATA SHEET
_ ELECTRON DEVICE
SILICON TRANSISTOR
IFA't Fdlllml
MEDIUM SPEED SWI ..
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures SO-8 N-Channel enhancement mode power field effect5.5 A, 30 V. R = 0.040 Ω @ V = 10 V, ..
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications such as diskused surface mount package.drive motor control, battery powered circuits w ..
FDS9945 ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9945_NL ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FA1F4M
