FA1A4M-T1B ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4M-T2B ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL , . . . TEST CONDITIONS
Collector ..
FA1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDFEATURES
PACKAGE DIMENSIONS o ResistorsBuilt-in TYPE
in millimeters
2.8i0.2
i' . . +0.!
..
FA1A4P-T1B ,Compound transistorFEATURES
PACKAGE DIMENSIONS o ResistorsBuilt-in TYPE
in millimeters
2.8i0.2
i' . . +0.!
..
FA1A4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °c)
_ ' CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
_ ¢~. _ ..
FDS9933 ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low R DS(ON)• Motor ..
FDS9933_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –20 V, R = 55 mΩ @ V = –4.5 V DS ..
FDS9933A ,Dual P-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -3.8 A, -20 V. R = 0.075 ..
FDS9933A_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R .DS(on)• Load switch• High power and current handling capability.• DC/DC converte ..
FDS9934C ,20V Complementary PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required. Q2D2D5 4D2DD1D36D1DQ17 2 ..
FDS9934C_NL ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FA1A4M-L-FA1A4M-T1B-FA1A4M-T2B
